利用半导体中加速暗物质-电子分析新方法的太阳反射暗物质实验限制
高能物理 - 实验
2024-04-25 v3 高能物理 - 唯象学
仪器与探测器
摘要
近期暗物质-电子（DM-electron）范式备受关注。超越标准晕模型、描述被高能天体加速的 DM 的模型也在被 intensive 检验。本快报提出一种专用于通过半导体探测器快速分析加速 DM-electron 相互作用的速度分量分析（VCA）方法，并实现了首个基于 HPGe 探测器的加速 DM-electron 分析。利用该方法，借助来自 CDEX-10 实验的 205.4 kgday 数据集，给出了首个基于锗的亚 GeV 太阳反射 DM-electron 相互作用限制。在重媒介情形下，我们的结果在 515 keV/ 质量区间表现优异，相较先前半导体实验实现了 3 个数量级的改进。在轻媒介情形下，给出了对轻于 0.1 MeV/ 的 DM 的最强实验室限制。该结果证明了 VCA 技术在未来基于半导体探测器的加速 DM-electron 分析中的可行性及巨大潜力。
引用
@article{arxiv.2309.14982,
title = {Experimental Limits on Solar Reflected Dark Matter with a New Approach on Accelerated-Dark-Matter-Electron Analysis in Semiconductors},
author = {Z. Y. Zhang and L. T. Yang and Q. Yue and K. J. Kang and Y. J. Li and H. P. An and Greeshma C. and J. P. Chang and Y. H. Chen and J. P. Cheng and W. H. Dai and Z. Deng and C. H. Fang and X. P. Geng and H. Gong and Q. J. Guo and T. Guo and X. Y. Guo and L. He and S. M. He and J. W. Hu and H. X. Huang and T. C. Huang and L. Jiang and S. Karmakar and H. B. Li and H. Y. Li and J. M. Li and J. Li and Q. Y. Li and R. M. J. Li and X. Q. Li and Y. L. Li and Y. F. Liang and B. Liao and F. K. Lin and S. T. Lin and J. X. Liu and S. K. Liu and Y. D. Liu and Y. Liu and Y. Y. Liu and H. Ma and Y. C. Mao and Q. Y. Nie and J. H. Ning and H. Pan and N. C. Qi and J. Ren and X. C. Ruan and M. K. Singh and T. X. Sun and C. J. Tang and Y. Tian and G. F. Wang and J. Z. Wang and L. Wang and Q. Wang and Y. F. Wang and Y. X. Wang and H. T. Wong and S. Y. Wu and Y. C. Wu and H. Y. Xing and R. Xu and Y. Xu and T. Xue and Y. L. Yan and N. Yi and C. X. Yu and H. J. Yu and J. F. Yue and M. Zeng and Z. Zeng and B. T. Zhang and F. S. Zhang and L. Zhang and Z. H. Zhang and J. Z. Zhao and K. K. Zhao and M. G. Zhao and J. F. Zhou and Z. Y. Zhou and J. J. Zhu},
journal= {arXiv preprint arXiv:2309.14982},
year = {2024}
}
备注
7 pages, 4 figures. Version updated to match PRL version