Development of Active Pixel Photodiode Sensors for Gamma Camera Application

Nur Sultan Salahuddin; Michel Paindavoine; Brahmantyo Heruseto; Michel Parmentier

Development of Active Pixel Photodiode Sensors for Gamma Camera Application

Other Computer Science 2011-05-24 v1

Authors: Nur Sultan Salahuddin , Michel Paindavoine , Brahmantyo Heruseto , Michel Parmentier

Abstract

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept.

Cite

@article{arxiv.1105.1412,
  title  = {Development of Active Pixel Photodiode Sensors for Gamma Camera Application},
  author = {Nur Sultan Salahuddin and Michel Paindavoine and Brahmantyo Heruseto and Michel Parmentier},
  journal= {arXiv preprint arXiv:1105.1412},
  year   = {2011}
}

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