This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300, 77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.
@article{arxiv.1806.01142,
title = {Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing},
author = {Arnout Beckers and Farzan Jazaeri and Andrea Ruffino and Claudio Bruschini and Andrea Baschirotto and Christian Enz},
journal= {arXiv preprint arXiv:1806.01142},
year = {2018}
}