Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18{\mu}m standard bulk CMOS technology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOS devices with different width to length ratios(W/L) are tested and characterized under various bias conditions at temperatures from 300K to 270mK. It is shown that the 0.18{\mu}m standard bulk CMOS technology is still working at sub-kelvin temperature. The kink effect and current overshoot phenomenon are observed at sub-kelvin temperature. Especially, current overshoot phenomenon in PMOS devices at sub-kelvin temperature is shown for the first time. The transfer characteristics of large and thin-oxide devices at sub-kelvin temperature are modeled using the simplified EKV model. This work facilitates the CMOS circuits design and the integration of CMOS circuits with silicon-based quantum chips at extremely low temperatures.
@article{arxiv.1811.12632,
title = {Characterization and Modeling of 0.18{\mu}m CMOS Technology at sub-Kelvin Temperature},
author = {Tengteng Lu and Zhen Li and Chao Luo and Jun Xu and Weicheng Kong and Guoping Guo},
journal= {arXiv preprint arXiv:1811.12632},
year = {2018}
}