中文

最小超引力中由 $b \to s \gamma$ 过程给出的带电 Higgs 质量界限

高能物理 - 唯象学 2009-10-28 v1

摘要

在最小超引力的框架下,研究了近期对包含 bsγb \rightarrow s \gamma 衰变的测量对带电 Higgs 玻色子质量的约束。结果表明,带电 Higgs 质量的下限关键取决于 Higgsino 质量参数(μ\mu)的符号。当 μ<0\mu<0 且两个 Higgs 真空期望值之比(tanβ\tan\beta)大于 10 时,该下限超过 400 GeV。对于 μ>0\mu>0 的情况,由于带电 Higgs 与超对称粒子贡献之间的抵消,未得到强约束。

关键词

引用

@article{arxiv.hep-ph/9601368,
  title  = {Charged Higgs mass bound from the $b \to s \gamma$ process in the minimal supergravity},
  author = {Toru Goto and Yasuhiro Okada},
  journal= {arXiv preprint arXiv:hep-ph/9601368},
  year   = {2009}
}

备注

Talk given by Toru Goto at Yukawa International Seminar '95: From the Standard Model to Grand Unified Theories, Kyoto, Japan, 21-25 Aug 1995; 10 pages LaTeX with ptptex.sty; 5 figures are included with epsf.sty