A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations, particularly for sensors whose proprietary process details - such as doping profiles or implant geometries - are unavailable. Data was obtained with a MALTA2 sensor fabricated in a 180 nm CMOS imaging technology on 30 {\mu}m epitaxial silicon using the MALTA beam telescope at CERN SPS. The model reproduces the measured inpixel efficiency with high accuracy and enables a realistic yet computationally lightweight analog pixel simulation. This method will be further employed in optimizing the digital sensor design for applications in high-rate particle tracking and high-granularity calorimetry.
@article{arxiv.2602.23139,
title = {Charge collection parameterization of MALTA2, a depleted monolithic active pixel sensor},
author = {L. Fasselt and P. Behera and D. V. Berlea and D. Bortoletto and C. Buttar and T. Chembakan and V. Dao and G. Dash and S. Haberl and T. Inada and F. K. Isik and P. Jana and X. Li and L. Li and H. Pernegger and P. Riedler and W. Snoeys and C. A. Solans Sánchez and A. Swoboda and I. Turk Cakir and M. van Rijnbach and M. Vázquez Núñez and A. Vijay and J. Weick and S. Worm},
journal= {arXiv preprint arXiv:2602.23139},
year = {2026}
}
Comments
7 pages, 5 figures, submitted to JINST for TWEPP 2025