GaMo4S8 中纳米尺度铁电畴的构型
材料科学
2021-01-12 v1 介观与纳米尺度物理
摘要
为阐明空位尖晶石晶体 GaMo4S8（可视为其对应物 GaV4S8 的自旋-空穴类似物）中轨道驱动相变的本质特征，我们在低温下进行了铁电畴结构的局域探针成像与辅助块体热释电测量。我们结合对称性及机械相容性分析，采用多种扫描探针技术揭示了在 10–100 nm 尺度上发展的分级畴结构。所识别的畴构型包含大量铁电畴边界与结，包括电中性与带电构型中的一级与二级畴壁，以及将中性二级壁转化为两个带相反电荷壁拓扑线缺陷。
引用
@article{arxiv.2101.03902,
title = {Architecture of nanoscale ferroelectric domains in GaMo4S8},
author = {Erik Neuber and Peter Milde and Adam Butykai and Sandor Bordacs and Hiroyuki Nakamura and Takeshi Waki and Yoshikazu Tabata and Korbinian Geirhos and Peter Lunkenheimer and Istvan Kézsmárki and Petr Ondrejkovic and Jirka Hlinka and Lukas M. Eng},
journal= {arXiv preprint arXiv:2101.03902},
year = {2021}
}
备注
This is the Accepted Manuscript version of an article accepted for publication in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-648X/aae448