A spin field effect transistor for low leakage current
Abstract
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.
Keywords
Cite
@article{arxiv.cond-mat/0407177,
title = {A spin field effect transistor for low leakage current},
author = {S. Bandyopadhyay and M. Cahay},
journal= {arXiv preprint arXiv:cond-mat/0407177},
year = {2009}
}
Comments
To appear in Physica E. The revised version has additional material which addresses the issue of which way the contacts should be magnetized in a Spin Field Effect Transistor. This was neither addressed in the previous version, nor in the upcoming journal paper