一种改进I-E图中Zener曲线的新S-S'对产生率表达式
数学物理
2008-12-06 v5 math.MP
摘要
为简化用于电荷密度波（CDW）输运的现象学建模，我们将隧穿哈密顿量的波泛函表述应用于一个以扰动搓板势为特征的物理输运问题。为此，我们考虑作为标量量子场波泛函的状态之间的隧穿。所得到的I-E曲线与Zener曲线吻合——后者用于以与假真空假设一致的波泛函实验拟合数据。这与电子-正电子对产生表示有非常强的收敛性。阈值电场值之后电流值曲线行为的相似性，支持为准一维金属输运问题提出的Bardeen钉扎能隙范式。
引用
@article{arxiv.math-ph/0411045,
title = {A New S-S' Pair Creation Rate Expression Improving Upon Zener Curves for I-E Plots},
author = {A. W. Beckwith},
journal= {arXiv preprint arXiv:math-ph/0411045},
year = {2008}
}
备注
22 pages,6 figures, and extensive editing of certain segments.Paper has been revised due to acceptance by World press scientific MPLB journal. This is word version of file which has been submitted to MPLBs editor for final proofing. Due for publication perhaps in mid spring to early summer 2006