A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

Christopher Mittag; Matija Karalic; Zijin Lei; Candice Thomas; Aymeric Tuaz; Anthony T. Hatke; Geoffrey C. Gardner; Michael J. Manfra; Thomas Ihn; Klaus Ensslin

doi:10.1103/PhysRevB.100.075422

A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

Mesoscale and Nanoscale Physics 2019-08-21 v2

Authors: Christopher Mittag , Matija Karalic , Zijin Lei , Candice Thomas , Aymeric Tuaz , Anthony T. Hatke , Geoffrey C. Gardner , Michael J. Manfra , Thomas Ihn , Klaus Ensslin

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Abstract

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$ . Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$ -factor.

Keywords

spin physics in semiconductors two-dimensional electron gas quantum dots and electron transport

Cite

@article{arxiv.1906.01995,
  title  = {A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas},
  author = {Christopher Mittag and Matija Karalic and Zijin Lei and Candice Thomas and Aymeric Tuaz and Anthony T. Hatke and Geoffrey C. Gardner and Michael J. Manfra and Thomas Ihn and Klaus Ensslin},
  journal= {arXiv preprint arXiv:1906.01995},
  year   = {2019}
}

A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

Abstract

Keywords

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