In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.
@article{arxiv.2503.08476,
title = {Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts},
author = {I. Villar Rodriguez and Y. Gul and C. P. Dempsey and J. T. Dong and S. N. Holmes and C. J. Palmstrom and M. Pepper},
journal= {arXiv preprint arXiv:2503.08476},
year = {2025}
}