Related papers: A Gate-Defined Quantum Point Contact in an InAs Tw…
We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from…
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the…
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed…
Time-resolved optical measurements of electron spin dynamics in modulation doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out of plane magnetic field…
We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the…
We study the bound states of a two dimensional free electron gas (2DEG) subjected to a perpendicular inhomogeneous magnetic field. An analytical transfer matrix (ATM) based exact quantization formula is derived for magnetic fields that vary…
We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening…
We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an…
Spin-orbit coupling is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact.…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
Two dimensional electron gases based on SrTiO$_3$ are an intriguing platform for exploring mesoscopic superconductivity combined with spin-orbit coupling, offering electrostatic tunability from insulator to metal to superconductor within a…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced,…