Related papers: A finite element analysis of a silicon based doubl…
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
We present a study of the electronic structure of two laterally coupled gaussian quantum dots filled with two particles. The exact diagonalization method has been used in order to inspect the spatial correlations and examine the particular…
We consider a double dot system of equivalent, capacitively coupled semiconducting quantum dots, each coupled to its own lead, in a regime where there are two electrons on the double dot. Employing the numerical renormalization group, we…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon…
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
We propose a set-up to realize two-channel Kondo physics using quantum dots. We discuss how the charge fluctuations on a small dot can be accessed by using a system of two single electron transistors arranged in parallel. We derive a…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
We develop a scalable architecture for quantum computation using controllable electrons of double-dot molecules coupled to a microwave stripline resonator on a chip, which satisfies all Divincenzo criteria. We analyze the performance and…
We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…