Related papers: A finite element analysis of a silicon based doubl…
We report charge transport measurements in a ring-shaped quadruple quantum dot system, composed of two vertically coupled double quantum dots connected in parallel. The vertical coupling introduces an isospin degree of freedom tied to the…
An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins…
The electronic properties of semiconductor, vertical, double quantum dot systems with few electrons are investigated by means of analytic, configuration-interaction, and mean-field methods. The combined effect of a high magnetic field,…
The development of the first generation of commercial quantum computers is based on superconductive qubits and trapped ions respectively. Other technologies such as semiconductor quantum dots, neutral ions and photons could in principle…
We study theoretically a double quantum dot hydrogen molecule in the GaAs conduction band as the basic elementary gate for a quantum computer with the electron spins in the dots serving as qubits. Such a two-dot system provides the…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
We address the electronic properties of quantum dots in the two-dimensional $\alpha-\mathcal{T}_3$ lattice when subjected to a perpendicular magnetic field. Implementing an infinite mass boundary condition, we first solve the eigenvalue…
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers,…
Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
We propose a scheme for implementing quantum gates and entanglement between spin qubits in the outer dots of a triple-dot system with an empty central dot. The voltage applied to the central dot can be tuned to realize the gate. Our scheme…
We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We present ground-state calculations for laterally coupled quantum dots containing 2, 4, and 8 electrons. As our emphasis is on spin effects our results are obtained by applying spin-density functional theory (SDFT). By varying the distance…
An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
With recent experimental advancements demonstrating high-fidelity universal logic gates and basic programmability, Silicon-based spin quantum bit (qubit) have emerged as promising candidates for scalable quantum computing. However,…
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits…