Related papers: Inter-valley interactions in Si quantum dots
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in…
Conventionally, perturbative and non-perturbative calculations are performed independently. In this paper, valleys in the configuration space in quantum mechanics are investigated as a way to treat them in a unified manner. All the known…
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is…
The electronic states of a parabolic quantum dot in a magnetic field are studied with the inclusion of the spin-orbit interaction. The analitycal formulae for the ground state energy of the interacting system are derived. The spin-orbit…
A key ingredient for a quantum network is an interface between stationary quantum bits and photons, which act as flying qubits for interactions and communication. Photonic crystal architectures are promising platforms for enhancing the…
Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in…
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate…
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the…
This article presents a full operator analytical method for studying the quadratic nonlinear interactions in quantum optomechanics. The method is based on the application of higher-order operators, using a six-dimensional basis of second…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We study coupled semiconductor quantum dots theoretically through a generalized Hubbard approach, where intra- and inter-dot Coulomb Correlation, as well as tunneling effects are described on the basis of realistic electron wavefunctions.…
The role of electronic interactions in the level structure of semiconductor quantum dots is analyzed in terms of the correspondence to the integrability of a classical system that models these structures. We find that an otherwise simple…
In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum…
Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled…
Quantum optomechanics describes the interaction between a confined field and a fluctuating wall due to radiation pressure. The dynamics of this system is typically understood using perturbation theory up to second order in the small…
We explore the emergence of topological phases in moir\'{e} MoTe$_2$/WSe$_2$ bilayer, highlighting the crucial role of spin-orbit coupling and Coulomb interactions at two holes per moir\'e unit cell \(v = 2\). Our analysis uncovers robust…
Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of…
The power of a quantum circuit is determined through the number of two-qubit entangling gates that can be performed within the coherence time of the system. In the absence of parallel quantum gate operations, this would make the quantum…