Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Tetsufumi Tanamoto

doi:10.1016/S0921-4526(99)00344-0

Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Quantum Physics 2009-10-31 v1

Authors: Tetsufumi Tanamoto

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Abstract

We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.

Keywords

quantum dots and electron transport quantum gates and qubits

Cite

@article{arxiv.quant-ph/9908021,
  title  = {Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET},
  author = {Tetsufumi Tanamoto},
  journal= {arXiv preprint arXiv:quant-ph/9908021},
  year   = {2009}
}

Comments

3 pages, 2 figures, use revtex.sty. 'The Eleventh International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)',July 19-23, 1999

Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

Abstract

Keywords

Cite

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