Related papers: Electrode thickness measurement of a Si(Li) detect…
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…
We describe the fabrication and characterization of solid 3-dimensional electrodes in direct contact with microfluidic channels, implemented using a single photolithography step, allowing operation in high-dielectric constant media.…
The linear response of CsI(Tl) crystals to $\gamma$-rays plays a crucial role in their calibration, as any deviation from linearity can introduce systematic errors not negligible in the measurement of $\gamma$ energy spectra, particularly…
The structure of the adsorbed layer of alkali ions on the surface of colloidal silica solutions with a particle size of ~27 nm has been studied by reflectometry and diffuse scattering of synchrotron radiation with a photon energy of about…
Large-area lithium-drifted silicon (Si(Li)) detectors, operable 150{\deg}C above liquid nitrogen temperature, have been developed for the General Antiparticle Spectrometer (GAPS) balloon mission and will form the first such system to…
The gold film (mean thickness $\approx$ 3.5 nm) was condensed in high vacuum at temperature 70 K on single-crystal sapphire substrate. The transport properties of the film at low temperature reveal simultaneously indications of 1D and 2D…
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite…
The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore,…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…
Electron-hole pairs in semiconductors are essential for solar cells and fast electronic circuitry, but the competition between carrier transport and relaxation into heat limits the efficiency and speed. Here we use ultrafast electron…
Rich soft X-ray emission lines of highly charged silicon ions (Si VI--Si XII) were observed by irradiating an ultra-intense laser pulse with width of 200 fs and energy of $\sim$90 mJ on the solid silicon target. The high resolution spectra…
The e+e- -> e+e- hadrons reaction, where one of the two electrons is detected in a low polar-angle calorimeter, is analysed in order to measure the hadronic photon structure function F2gamma . The full high-energy and high-luminosity data…
A silicon particle-telescope system for light-ion nuclear reactions is described. In particular, the system is designed to be optimized for level density and gamma-ray strength function measurements with the so-called Oslo method. Eight…
We propose a polarization-insensitive and high-efficiency plasmonic silicon Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission. Our photodiode is based on a…
We present a description of the originally developed $\beta$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4\pi$-geometry. The full absorption spectrometer allows for direct measurements of…
The charge radii of Sigma^- and pi^- have been determined by direct elastic scttering on shell electrons. The measurement was performed in the framework of the SELEX (E781) charm hadroproduction experiment at Fermilab which employs a 600…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
Understanding how light interacts at the nanoscale with metals, semiconductors, or ordinary dielectrics is pivotal if one is to properly engineer nano-antennas, filters and, more generally, devices that aim to harness the effects of new…
Using a high energy electron beam for the imaging of high density matter with both high spatial-temporal and areal density resolution under extreme states of temperature and pressure is one of the critical challenges in high energy density…