Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV

I. E. Alexeev; S. V. Bakhlanov; E. A. Chmel; A. V. Derbin; I. S. Drachnev; I. M. Kotina; M. S. Mikulich; V. N. Muratova; N. V. Nyazova; D. A. Semenov; M. V. Trushin; E. V. Unzhakov

Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV

Instrumentation and Detectors 2022-10-25 v1 High Energy Physics - Experiment High Energy Physics - Phenomenology Nuclear Experiment

Authors: I. E. Alexeev , S. V. Bakhlanov , E. A. Chmel , A. V. Derbin , I. S. Drachnev , I. M. Kotina , M. S. Mikulich , V. N. Muratova , N. V. Nyazova , D. A. Semenov , M. V. Trushin , E. V. Unzhakov

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Abstract

We present a description of the originally developed $\beta$ -spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4\pi$ -geometry. The full absorption spectrometer allows for direct measurements of $\beta$ -spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $\beta$ -spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $\gamma$ -quanta in coincidence with the pair of Si(Li)-spectrometers.

Keywords

beta spectrometer si(li) detector 4pi geometry full absorption electron backscattering bgo detector gamma coincidence

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@article{arxiv.2210.13192,
  title  = {Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV},
  author = {I. E. Alexeev and S. V. Bakhlanov and E. A. Chmel and A. V. Derbin and I. S. Drachnev and I. M. Kotina and M. S. Mikulich and V. N. Muratova and N. V. Nyazova and D. A. Semenov and M. V. Trushin and E. V. Unzhakov},
  journal= {arXiv preprint arXiv:2210.13192},
  year   = {2022}
}

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9 pages, 7 figures

Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV

Abstract

Keywords

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