Related papers: Electrode thickness measurement of a Si(Li) detect…
Distributions of potential and lithium content inside lithium ion batteries highly affects their performance and durability. An increased heterogeneity of the lithium distribution is expected in thick electrodes with high energy densities…
A Si(Li) detector fabrication procedure has been developed with the aim of satisfying the unique requirements of the GAPS (General Antiparticle Spectrometer) experiment. Si(Li) detectors are particularly well-suited to the GAPS detection…
In this paper, we use the Mappings photoionization code to explore the physical parameters that impact on the measurement of electron temperature and abundance in HII regions. In the previous paper we presented observations and measurements…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and…
A new type of laser photodetachment (LPD) technique has been developed for the measurement of electron sheath thickness around an electrostatic probe and for the measurement of the length of collection region of photodetached electrons…
For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using…
We measured the local composition and thickness of SiO2-based glass material from diffraction. By using four dimensional scanning transmission electron microscopy (4D-STEM), we obtained diffraction at each scanning point. Comparing the…
Detailed measurements of the electron performance of the ATLAS detector at the LHC are reported, using decays of the Z, W and J/psi particles. Data collected in 2010 at sqrt(s)=7 TeV are used, corresponding to an integrated luminosity of…
We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase…
The first lithium-drifted silicon (Si(Li)) detectors to satisfy the unique geometric, performance, and cost requirements of the General Antiparticle Spectrometer (GAPS) experiment have been produced by Shimadzu Corporation. The GAPS Si(Li)…
The purpose of this project is to investigate the use of charge couple devices (CCDs) to detect electrons directly. This can be done in transmission electron microscopy (TEM) for electrons over 100 KeV, but for space plasma instruments,…
We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted…
The lithium-drifted silicon (Si(Li)) detector developed for the General Antiparticle Spectrometer (GAPS) experiment features a thick (~2.2 mm) sensitive layer, large (10 cm) diameter, and excellent energy resolution (~4 keV for 20-100 keV…
We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have…
We report on the properties of thick GEM-like (THGEM) electron multipliers made of 0.4 mm thick double-sided Cu-clad G-10 plates, perforated with a dense hexagonal array of 0.3 mm diameter drilled holes. Photon detectors comprising THGEMs…
We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data shows that the effective thickness of a delta-layer can be obtained through a weak localization analysis of…
Prototype of gamma ray detector based on Micro Pixel Avalanche Photodiodes (MAPD) with high pixel density 15000 pixel/$mm^2$, optically coupled to Lutetium Fine Silicate (LFS) scintillator has been developed. The detection performance…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
Thermal detectors are a cornerstone of infrared (IR) and terahertz (THz) technology due to their broad spectral range. These detectors call for suitable broad spectral absorbers with minimalthermal mass. Often this is realized by plasmonic…