We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is successfully recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step towards use of hex-SiGe for optoelectronic applications.
@article{arxiv.2506.21159,
title = {Electrical Characterization of hexagonal SiGe},
author = {Isabelle Bollier and Federico Balduini and Marilyne Sousa and Marco Vettori and Wouter H. J. Peeters and Erik P. A. M. Bakkers and Heinz Schmid},
journal= {arXiv preprint arXiv:2506.21159},
year = {2025}
}