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We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of…
We report on the production of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted…
We report on measurements of 1 and 1.5 MeV monoenergetic electrons with a Timepix3-based detector using a 0.5 mm thick silicon sensor. A $^{90}$Sr $\beta$-emitting radioisotope was used as the source of electrons, and a monochromator…
We present new results regarding the features of high energy photon emission by an electron beam of 178 GeV penetrating a 1.5 cm thick single Si crystal aligned at the Strings-Of-Strings (SOS) orientation. This concerns a special case of…
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…
Semi monolithic detector designs with a series of stacked thin monolithic scintillator plates and side readout are an attractive approach for potentially achieving very high performance in a positron emission tomography (PET) scanner. In…
A sensitive polarization modulation technique uses photoelastic modulation and hetrodyne detection to simultaneously measure the Faraday rotation and induced ellipticity in light transmitted by semiconducting and metallic samples. The…
Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated…
Line ratio of $3d-2p$ transition lines in boron-like spectra of Si X, S XII, Ar XIV and Fe XXII has been investigated. Collisional-radiative model calculations reveal that the line ratio is sensitive to the electron density in ranges of…
We report measured dipolar asymmetry ratios at the LIII edges of the heavy rare earth metals. The results are compared with a first principles calculation and excellent agreement is found. A simple model of the scattering is developed,…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
X-ray scattering spectra of Cu and Ni metals have been measured using monochromatic synchrotron radiation tuned from far above to more than 10 eV below threshold. Energy conservation in the scattering process is found to be sufficient to…
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…
Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semi-transparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser.…
He atom scattering has been shown to be a sensitive probe of electron-phonon interaction properties at surfaces. Here it is shown that measurements of the thermal attenuation of the specular He atom diffraction peak (the Debye-Waller…
Large mass single-electron-resolution solid state detectors are desirable to search for low mass dark matter candidates and to measure coherent elastic neutrino nucleus scattering (CE$\nu$NS). Here, we present results from a novel 100 g…
Extremely radiation hard sensors are needed in particle physics experiments to instrument the region near the beam pipe. Examples are beam halo and beam loss monitors at the Large Hadron Collider, FLASH or XFEL. Currently artificial diamond…
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This…
The spectrum of laser-plasma generated X-rays is very important, it characterizes electron dynamics in plasma and is basic for applications. However, the accuracies and efficiencies of existing methods to diagnose the spectrum of…
This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering…