Related papers: Type inversion in irradiated silicon: a half truth
A novel methodology, named the diffusion profile method, is proposed in this research to measure the electric field of a low gain avalanche detector (LGAD).The proposed methodology utilizes the maximum of the time derivative of the edge…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…
A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip…
Modern scientific instruments operate under increasingly extreme constraints on bandwidth, latency, and power. Inference at the sensor edge determines experimental data collection efficiency by deciding which information to save for further…
Electric fields arising from the distribution of charge in metal halide perovskite solar cells are critical for understanding the many weird and wonderful optoelectronic properties displayed by these devices. Mobile ionic defects are…
Optical data is encoded with information on the microscopic interaction between charge carriers. For an electron-phonon system, the Eliashberg equations apply and a Kubo formula can be used to get the infrared conductivity. The task of…
Dry and wet drawing materials were investigated by THz time-domain spectroscopy in transmission mode. Carbon-based and iron-gall inks have been studied, some prepared following ancient recipes and others using current synthetic materials; a…
Previous experimental and theoretical work has given evidence of the existence of doubly charged exciton states in strongly screened bilayers of transition metal dichalcogenide (TMD) layers. These complexes are important because they are…
We use a single ion as an movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar RF trap and characterize the static fields over an extended region along…
Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap…
It is difficult to completely eliminate disorder during the fabrication of graphene-based nanodevices. From a simulation perspective, it is straightforward to determine the electronic transport properties of disordered devices if complete…
We theoretically study the carrier-envelope phase dependent inversion generated in a two-level system by excitation with a few-cycle pulse. Based on the invariance of the inversion under time reversal of the exciting field, parameters are…
In this paper we present a method for simulating the response of microstrip detectors to minimum ionizing particles, making use of a program for field calculation, a program for carrier drift and SPICE for circuit response. A knowledge of…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal…
The precision in reconstructing events detected in a dual-phase time projection chamber depends on an homogeneous and well understood electric field within the liquid target. In the XENONnT TPC the field homogeneity is achieved through a…
We describe a novel method to measure the surface charge densities on optical fibers placed in the vicinity of a trapped ion, where the ion itself acts as the probe. Surface charges distort the trapping potential, and when the fibers are…
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon…
We study the absorption and dispersion properties of a weak tunable probe field in a four-level Y-type atomic system driven by two strong laser (coupling) fields within the framework of density matrix formalism. It is found that the probe…