Related papers: Type inversion in irradiated silicon: a half truth
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…
We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in…
Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…
Here we study the single-particle, electronic transport and optical properties of a gapped system described by a simple two-band Hamiltonian with inverted valence bands. We analyze its properties in the three-dimensional (3D) and the…
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the…
We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are…
Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high…
Electromagnetic induction methods are a common means for geophysical survey. For soil structures that are invariant in one spatial dimension such as trench structures, we propose a fast forward model based on a 2D response function, taking…
Dynamic optical sensors, as those based on the reflectivity of isotropic dielectrical interfaces, can be useful for measuring small changes in the refractive index of fluid media. Exact and approximated explicit formulas for their…
Here we perform a series of time-resolved experiments where a 100 fs pump pulse is tuned between 528 nm and 555 nm, across the second indirect gap of intrinsic silicon at ~540 nm which involves electrons in a higher-lying conduction band…
Optical pump-terahertz probe differential transmission measurements of as-prepared single layer graphene (AG)(unintentionally hole doped with Fermi energy $E_F$ at $\sim$180 meV), nitrogen doping compensated graphene (NDG) with $E_F$…
Diamond detectors are attractive for operation in harsh radiation environments because they combine radiation tolerance, fast signal formation, and low leakage current. Realistic detector-response simulations require an accurate description…
This paper presents some observations and ideas collected during the tests of the SOI sensors, based on the integration type pixels. First, it contains a rough analysis of the Correlated Double Sampling filtering properties with respect to…
Understanding electron and ion heating phenomenon in capacitively coupled radio-frequency plasma discharges is vital for many plasma processing applications. In this article, using particle-in-cell simulation technique we investigate the…
By employing x-ray photoelectron spectroscopy (XPS), we have been able to establish the occurrence of charge-transfer doping in few-layer graphene covered with electron acceptor (TCNE) and donor (TTF) molecules. We have performed…
Characterization of the trap rf induced a.c. Zeeman shift is essential for achieving high accuracy in optical ion clocks. In this work, we demonstrate the experimental characterization of this shift using highly charged $\mathrm{Ca}^{14+}$.…
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric…
Strong-field mid-infrared pump--terahertz (THz) probe spectroscopy has been proven as a powerful tool for light control of different orders in strongly correlated materials. We report the construction of an ultrafast broadband infrared…
Detector requirements for far infrared astronomy generally result in devices which exhibit a few-moded response to incident radiation. The sensitivity and spatial form of the individual modes to which such a detector is sensitive can be…