Related papers: Pt-based metallization of PMOS devices for the fab…
Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examined the structural stability and interlayer binding properties of PtSe$_2$, a representative transition metal dichalcogenide (TMD) with strong…
a-Nb(x)Si(1-x) thin films with thicknesses down to 25 {\AA} have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in…
Epitaxial bilayers of ferromagnetic La2/3Ca1/3MnO3 (LCMO) and superconducting YBa2Cu3O7-d (YBCO) have been grown on single-crystalline SrTiO3 (STO) substrates by pulsed laser deposition. The Manganese magnetization profile across the FM…
We describe Na0.67Mn0.625Fe0.25Co0.125O2 (NMFCO), a P2-type sodium-ion battery cathode. Our composition, with significantly less Co than in an earlier study, shows discharge capacity close to 190 mAhg-1 and specific energy density exceeding…
We present a joint experimental and theoretical study of the superconducting phase of the layered binary silicide BaSi2. Compared with the layered AlB2 structure of graphite or diboride-like superconductors, in the hexagonal structure of…
We develop highly corrosion-resistant and conductive Ti-Nb-O coatings for metallic components -- bipolar plates (BPPs) and porous transport layers (PTLs) -- in PEM water electrolyzers. Using reactive high-power impulse magnetron sputtering…
We demonstrate a simple method to tailor the magnetization reversal mechanisms of Co/Pt multilayers by depositing them onto large area nanoporous anodized alumina (AAO) with various aspect ratios, A = pore depth/diameter. Magnetization…
The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high…
Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices. In this article, we report how the optical, morphological,…
3R-MoS2, a MoS2 polytype with broken inversion symmetry, enables unique light-matter interactions and is promising for linear and nonlinear integrated photonics beyond the monolayer limit. Yet, systematic studies of its thickness-dependent…
Pt/Ti metallisation bilayers are used as bottom electrodes for ferroelectric thin films. During deposition of the ferroelectric films, these electrodes are exposed to elevated temperatures causing modifications of the Pt/Ti bottom…
Although 2D materials hold great potential for next-generation pressure sensors, recent studies revealed that gases permeate along the membrane-surface interface that is only weakly bound by van der Waals interactions, necessitating…
Most materials recently developed for room temperature phosphorescence (RTP) lack of practical relevance due to their inconvenient crystalline morphology. Using amorphous material systems instead, programmable luminescent tags (PLTs) based…
Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The…
Continued scaling into the sub 7 nm regime exacerbates quantum limited resistivity in Cu interconnects. We evaluated layered PdCoO2 and explicitly benchmarked it against Cu to identify mechanisms that maintain conductivity under…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…
We have grown untwinned YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO) films on (110) MgO substrates that were pre-annealed at high temperature in oxygen atmosphere. The annealing results in surface reconstruction with shallow facets, which induce the…
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently…
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…
The Tm-Ba-Cu-O solder can be successfully used to produce a superconductive joint between MT-YBCO parts. The peculiarities of solidification, phase formation, structure transformations and electromagnetic properties of MT-YBCO soldered with…