Related papers: Pt-based metallization of PMOS devices for the fab…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the…
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni…
Pt catalyst particles on reducible oxide supports often change their activity significantly at elevated temperatures due to the strong metal-support interaction (SMSI), which induces the formation of an encapsulation layer around the noble…
High traffic touch surfaces such as doorknobs, countertops, and handrails can be transmission points for the spread of pathogens, emphasizing the need to develop materials that actively self-sanitize. Metals are frequently used for these…
We report on the perpendicular magnetic anisotropy (PMA) behavior of heavy metal (HM)/ Fe alloy/MgO thin film heterostructures after an ultrathin HfO2 passivation layer is inserted between the Fe alloy and the MgO. This is accomplished by…
Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient for the development of electrically controlled spintronic devices. Due to their relatively large spin-polarization, high Curie temperature and low…
Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser…
The potential applications of dilute magnetic oxides (DMOs) in magneto-optic and spintronic devices have attracted significant attention, although understanding their magnetic behavior is complex due to intricate interactions of intrinsic…
High-temperature superconducting YBa2Cu3O7-d (YBCO) thin-film detectors with improved responsivities were developed for fast time-domain measurements in the THz frequency range. YBCO thin films of 30 nm thickness were patterned to micro-…
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an…
We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K) and magnetic-field (-15-15 T) region. In the low-temperature regime where quantum…
This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important…
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing…
The effect of annealing on the basal-plane electrical resistivity of the YBa$_2$Cu$_3$O$_{7-\delta}$ single crystals is studied in a broad range of oxygen contents. Within the framework of s-d scattering of electrons by phonons, an increase…
Two dimensional materials as electrodes have shown unique advantages such as the infinite planar lengths, broad electrochemical window, and much exposed active sites. In this work, by means of density functional theory computations, we…
We studied the magnetization losses of four different types of filamentary YBCO coated conductors. A 10 mm wide YBCO coated conductor was subdivided into 20 filaments by laser cutting. The separation of coupling loss from the total is…
Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3…
We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-\delta}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…