Related papers: Single Event Effects in the Pixel readout chip for…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions…
The readout electronics of the ATLAS Hadronic Endcap Calorimeter (HEC) will have to withstand an about 3-5 times larger radiation environment at the future high-luminosity LHC (HLLHC) compared to their design values. The preamplifier and…
Hybrid pixel sensor technology such as the Medipix3 represents a unique tool for electron imaging. We have investigated its performance as a direct imaging detector using a Transmission Electron Microscope (TEM) which incorporated a…
Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of the Large Hadron Collider (LHC) has…
We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the…
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…
A gaseous beam monitor utilizing gas electron multiplier (GEM) and pixel sensors is being developed for the Cooling Storage Ring (CSR) External-target Experiment (CEE) at Heavy Ion Research Facility in Lanzhou (HIRFL). The beam monitor is…
We are developing a kilo-pixels Ti/Au TES array as a backup option for Athena X-IFU. Here we report on single-pixel performance of a 32$\times$32 array operated in a Frequency Division Multiplexing (FDM) readout system, with bias…
We conducted a series of beam tests of prototype TPCs for the International Linear Collider (ILC) experiment, equipped with an MWPC, a MicroMEGAS, or GEMs as a readout device. The prototype operated successfully in a test beam at KEK under…
Experimental searches for axions or dark photons that couple to the standard model photon require photosensors with low noise, broadband sensitivity, and near zero backgrounds. Here, we introduce an experimental architecture, in which a…
A description of an edge-biasing experiment conducted on the SPECTOR (Spherical Compact Toroid) plasma injector is presented, along with initial results. The insertion of a disc-shaped molybdenum electrode (probe), biased at up to +100V,…
Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in space environment, we investigate the total…
We demonstrate a prototype kinetic inductance detector (KID) readout system that uses less than 10 mW per pixel. The CCAT-prime RFSoC based readout is capable of reading four independent detector networks of up to 1000 KIDs each. The power…
A small drift chamber was read out by means of a MediPix2 readout chip as direct anode. A Micromegas foil was placed 50 $\mu$m above the chip, and electron multiplication occurred in the gap. With a He/Isobutane 80/20 mixture, gas…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual…
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…