Related papers: Single Event Effects in the Pixel readout chip for…
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…
The average minimum number of bits needed for lossless readout of a pixel detector is calculated, in the regime of interest for particle physics where only a small fraction of pixels have a non-zero value per frame. This permits a…
We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the…
The High Energy Photon Source (HEPS) represents a fourth-generation light source. This facility has made unprecedented advancements in accelerator technology, necessitating the development of new detectors to satisfy physical requirements…
The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…
Radiation damage on front-end readout and trigger electronics is an important issue in the COMET Phase-I experiment at J-PARC, which plans to search for the neutrinoless transition of a muon to an electron. To produce an intense muon beam,…
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk…
The silicon pixel detector of the ALICE experiment at LHC comprises the two innermost layers of the inner tracking system of the apparatus. It contains 1200 readout chips, each of them corresponding to a 8192 pixel matrix. The single chip…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation…
AstroPix is a high-voltage CMOS (HV-CMOS) monolithic active pixel sensor (MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging…
Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both…
We present experimental results of the cross-section related to cosmic-ray irradiation at ground level for minimum-sized six-transistors (6T) and eight-transistors (8T) bit-cells SRAM memories implemented on a 65 nm CMOS standard…
Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
To investigate the 1.6 GeV high-energy proton beam detector utilized in the CSNS Phase-II upgrade project, a plastic scintillator detector presents a viable option due to its superior radiation hardness. This study investigates the effects…
High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
The future Belle II experiment will employ a computer-farm based data reduction system for the readout of its innermost detector, a DEPFET-technology based silicon detector with pixel readout. A large fraction of the background hits can be…