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Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$…

Instrumentation and Detectors · Physics 2018-09-18 J. Lange , G. Giannini , S. Grinstein , M. Manna , G. Pellegrini , D. Quirion , S. Terzo , D. Vázquez Furelos

We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the beam profile of the international linear collider. It utilizes…

Instrumentation and Detectors · Physics 2015-06-30 Yutaro Sato , Hirokazu Ikeda , Akiya Miyamoto , Yosuke Takubo , Toshiaki Tauchi , Hitoshi Yamamoto

For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the detector are a high dynamic range of 0, 1 - to more than 10E4…

Instrumentation and Detectors · Physics 2015-06-11 J. Schwandt , E. Fretwurst , R. Klanner , J. Zhang

We demonstrate the design of an integrated conditional quantum teleportation circuit and a readout circuit using a two-dimensional photonic crystal single chip. Fabrication and testing of the proposed quantum circuit can be accomplished…

Quantum Physics · Physics 2015-06-26 Durdu Ö. Güney , David A. Meyer

This paper presents experimental and simulation data to characterize the Ring Oscillators (RO) produced in 65-nm CMOS technology for the next promising generation of readout chips for the pixel detector in the Inner Tracker (ITk) at the…

Instrumentation and Detectors · Physics 2026-01-22 Yahya Khwaira , Abdenour Lounis , Maurice Cohen-Solal , Mohsine Menouni , Pierre Barrillon , Denis Fougeron

Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is…

The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…

Systems and Control · Electrical Eng. & Systems 2022-08-10 Elmira Moussavi , Dominik Sisejkovic , Animesh Singh , Daniyar Kizatov , Rainer Leupers , Sven Ingebrandt , Vivek Pachauri , Farhad Merchant

Combining gaseous detectors with a high-granularity pixelated charge readout enables experimental applications which otherwise could not be achieved. This includes high-resolution tracking of low-energetic particles, requiring ultra-low…

The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high-rate spectroscopic X-ray imaging using high-Z materials. It can be tiled on all 4 sides making it ideal for constructing…

We present the first characterization results of Timespot1, an ASIC designed in CMOS 28 nm technology, featuring a $32 \times 32$ pixel matrix with a pitch of $55 ~ \mu m$. Timespot1 is the first small-size prototype, conceived to readout…

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…

Silicon Photomultipliers with cell-pitch ranging from 12 $\mu$m to 20 $\mu$m were tested against neutron irradiation at moderate fluences to study their performance for calorimetric applications. The photosensors were developed by FBK…

Measurements of double photoelectron emission (DPE) probabilities as a function of wavelength are reported for Hamamatsu R8778, R8520, and R11410 VUV-sensitive photomultiplier tubes (PMTs). In DPE, a single photon strikes the PMT…

Instrumentation and Detectors · Physics 2015-09-30 C. H. Faham , V. M. Gehman , A. Currie , A. Dobi , P. Sorensen , R. J. Gaitskell

We report on measurements of 1 and 1.5 MeV monoenergetic electrons with a Timepix3-based detector using a 0.5 mm thick silicon sensor. A $^{90}$Sr $\beta$-emitting radioisotope was used as the source of electrons, and a monochromator…

Instrumentation and Detectors · Physics 2024-12-03 Babar Ali , Zdeněk Kohout , Hugo Natal da Luz , Rudolf Sýkora , Tomáš Sýkora

As the Chinese Spallation Neutron Source enters Phase II, the increase in proton beam power will lead to a further boost in the intensity of pulsed neutron beams. To address the demand for higher event-rate readout electronics for…

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process,…

We describe a method that uses Optical Transition Radiation (OTR) screens to measure in a single shot the emittance of an electron beam with an energy greater than 100 MeV. Our setup consists of 4 OTR screens located near a beam waist. A…

Accelerator Physics · Physics 2015-03-17 Nicolas Delerue , Riccardo Bartolini , Cyrille Thomas

In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $\sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this…

Instrumentation and Detectors · Physics 2020-11-19 Tamer Tolba , Dieter Grzonka , Thomas Sefzick , James Ritman

The STEREO experiment will search for a sterile neutrino by measuring the anti-neutrino energy spectrum as a function of the distance from the source, the ILL nuclear reactor. A dedicated electronic system, hosted in a single microTCA…

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