Related papers: Charging effects in niobium nanostructures
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Niobium metal occupies nearly 100\% of the volume of a typical 2D transmon device. While the aluminum Josephson junction is of utmost importance, maintaining quantum coherence across the entire device means that pair-breaking in Nb leads,…
We report the low temperature current-voltage (I-V) characteristics studies in quasi-one dimensional conducting polymer nanofibers. We find a threshold voltage Vt below which little current flows at temperatures below 30-40 K. For V > Vt…
We report on the temperature dependence of the intrinsic resistance of long individual disordered single-wall carbon nanotubes. The resistance grows dramatically as the temperature is reduced, and the functional form is consistent with an…
We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as…
Motivated by the discovery of superconductivity in the infinite-layer nickelate family, we report an experimental endeavor to clean the surface of nickelate superconductor Pr0.8Sr0.2NiO2 films by Ar+ ion sputtering and subsequent annealing,…
We synthesized monodisperse cobalt-platinum nanoparticles Co(0.14-0.22)Pt(0.86-0.78) of 9 nm in diameter by colloidal chemistry methods and deposited them by the Langmuir-Blodgett technique as highly ordered monolayers onto substrates with…
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…
The superfluid phase and Coulomb drag effect caused by the pairing in the system of spatially separated electrons and holes in two coaxial cylindrical nanotubes are predicted. It is found that the drag resistance as a function of…
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…
High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance…
We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length,…
The observed correlation of oxygen vacancies and room temperature ferromagnetic ordering in Co doped ZnO1-o nanoparticles reported earlier (Naeem et al Nanotechnology 17, 2675-2680) has been further explored by transport and optical…
Colloidal semiconductor nanoplatelets combine weak lateral confinement with strong Coulomb interactions, enhanced by dielectric confinement. When the platelets are charged with carriers of the same sign, this results in severe Coulomb…
I. Introduction (Preface, Basic properties of semiconductor nanostructures). II. Theory of Coulomb-blockade oscillations (Periodicity of the oscillations, Amplitude and lineshape). III. Experiments on Coulomb-blockade oscillations (Quantum…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a…
In order to illustrate the emergence of Coulomb blockade from coherent quantum phase-slip processes in thin superconducting wires, we propose and theoretically investigate two elementary setups, or "devices". The setups are derived from…