Related papers: Single electron capacitance spectroscopy of vertic…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off…
We have used an electromigration technique to fabricate a $\rm{C_{{60}}}$ single-molecule transistor (SMT). Besides describing our electromigration procedure, we focus and present an experimental study of a single molecule quantum dot…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
We investigate a Quantum Dot (QD) in a Carbon Nanotube (CNT) in the regime where the QD is nearly isolated from the leads. An aluminum single electron transistor (SET) serves as a charge detector for the QD. We precisely measure and tune…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…
Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz)…
Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…