Related papers: Single electron capacitance spectroscopy of vertic…
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We report on the electron analog of the single photon gun. On demand single electron injection in a quantum conductor was obtained using a quantum dot connected to the conductor via a tunnel barrier. Electron emission is triggered by…
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy…
We propose an on-demand single photon source for quantum cryptography using a metal-insulator-semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under…
We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…
We propose a set-up to realize two-channel Kondo physics using quantum dots. We discuss how the charge fluctuations on a small dot can be accessed by using a system of two single electron transistors arranged in parallel. We derive a…
Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…
Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with…
We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is subjected to a measurement of its occupation number using a single electron transistor (SET). The measurement is made when the bare tunneling…
In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…
We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is…
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…