Related papers: Spin flip scattering in magnetic junctions
Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
We derive a kinetic equation for the electrons moving on the surface of a three-dimensional topological insulator. Due to the helical nature of the excitations backward scattering is suppressed in the collision integral, and the spin…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…
We investigate the transport properties of itinerant electrons interacting with a background of localized spins in a correlated paramagnetic phase of the pyrochlore lattice. We find a residual resistivity at zero temperature due to the…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce due to often conflicting requirements of stabilizing both…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…
We study spin relaxation in dilute magnetic semiconductors near a ferromagnetic transition, where spin fluctuations become strong. An enhancement in the scattering rate of itinerant carriers from the spin fluctuations of localized…
Tunneling spectroscopy is applied to tunnel junctions with only one or no ferromagnetic electrode to study the excitation of quasi particles in magnetic tunnel junctions. The bias dependence is investigated with high accuracy by inelastic…
We investigate the spin Seebeck effect and spin pumping in a junction between a ferromagnetic insulator and a magnetic impurity deposited on a normal metal. By the numerical renormalization group calculation, we show that spin current is…
Spin dependent transport has been investigated for an {\it open shell singlet} diiron-oxo cluster. Currents and magnetoresistances have been studied, as a function of spin state, within the non-equilibrium Green's function approach. The…
A simple double-decker molecule with magnetic anisotropy, nickelocene, is attached to the metallic tip of a low-temperature scanning tunneling microscope. In the presence of a Cu(100) surface, the conductance around the Fermi energy is…
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…
Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted…
We analyze the electrical characteristics of a circuit consisting of a free thin-film magnetic layer and source and drain electrodes that have opposite magnetization orientations along the free magnet's two hard directions. We find that…
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…