Related papers: Spin flip scattering in magnetic junctions
Highly symmetric magnetic environments have been suggested to stabilize the magnetic information stored in magnetic adatoms on a surface. Utilized as memory devices such systems are subjected to electron tunneling and external magnetic…
We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of…
The effect of nonmagnetic impurities and the effective masses on the spin-dependent transport in a ferromagnet-normal metal-ferromagnet junction is investigated on the basis of a two-band model. Our results show that impurities and the…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved…
We present a simple model of composite particle tunnelling through a rectangular potential barrier in presence of magnetic field. The exact numerical solution of the problem is provided and the applicability to real physical situations is…
We studied electrical transport in magnetic semiconductors, which is determined by scattering of free carriers off localized magnetic moments. We calculated the scattering time and the mobility of the majority and minority-spin carriers…
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium…
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also…
Spin-bottlenecks are created in magnetic-tunnel-junction devices by spatial inhomogeneity in the relative resistances for up and down spins. We propose a simple electrical circuit model for these devices which incorporates spin-bottleneck…
It is shown that in the presence of strong magnetic fields, spin-orbit scattering causes a sharp increase in the effective density of states in the variable-range hopping regime when temperature decreases. This effect leads to an…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…
We study electron tunneling through two small ferromagnetic dots. Quantum charge fluctuations and interdot coupling make each Coulomb peak of the conductance at zero interdot coupling split across. The interdot tunnel coupling is determined…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…