Related papers: The Equilibrium Shape of Quantum Dots
The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied…
The equilibrium shapes of InAs quantum dots (i.e., dislocation-free, strained islands with sizes >= 10,000 atoms) grown on a GaAs (001) substrate are studied using a hybrid approach which combines density functional theory (DFT)…
The equilibrium shapes and energies of coherent strained InP islands grown on GaP have been investigated with a hybrid approach that has been previously applied to InAs islands on GaAs. This combines calculations of the surface energies by…
We study numerically the equilibrium shapes, shape transitions and dislocation nucleation of small strained epitaxial islands with a two-dimensional atomistic model, using simple interatomic pair potentials. We first map out the phase…
We investigate the formation and the coarsening dynamics of islands in a strained epitaxial semi-conductor film. These islands are commonly observed in thin films undergoing a morphological instability due to the presence of the elasto…
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…
Nonlinear evolution of three-dimensional strained islands or quantum dots in heteroepitaxial thin films is studied via a continuum elasticity model and the development of a nonlinear dynamic equation governing the film morphological…
Morphology evolution and coarsening of metal nanoislands is computed within the framework of a surface diffusion-type model that includes the effects of the electron energy confinement within the film, the charge spillage at the…
We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed…
We study the equilibrium shape, shape transitions and optimal size of strained heteroepitaxial nanoislands with a two-dimensional atomistic model using simply adjustable interatomic pair potentials. We map out the global phase diagram as a…
Quantum dots have promising properties for optoelectronic applications. They can be grown free of dislocations in highly mismatched epitaxy in the coherent Stranski-Krastanov mode. In this chapter, some thermodynamic aspects related to the…
We present a new approach for predicting stable equilibrium shapes of crystalline islands on flat substrates, as commonly occur through solid-state dewetting of thin films. The new theory is a generalization of the widely used Winterbottom…
The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these…
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The…
A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a…
We study the relaxation to equilibrium of two dimensional islands containing up to 20000 atoms by Kinetic Monte Carlo simulations. We find that the commonly assumed relaxation mechanism - curvature-driven relaxation via atom diffusion -…
A mean field theory is developed for the calculation of the surface free energy of the staggered BCSOS, (or six vertex) model as function of the surface orientation and of temperature. The model approximately describes surfaces of crystals…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
Square lattice gas models for heteroepitaxial growth are studied by means of kinetic Monte Carlo simulations, in order to find a possible origin of anisotropic island shape observed in growth experiments of long organic molecules. When…
We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs…