Related papers: The Equilibrium Shape of Quantum Dots
We consider a model to describe stable configurations in epitaxial growth of crystals in the two dimensional case, and in the regime of linearized elasticity. The novelty is that the model also takes into consideration the adatom density on…
We examine the shape of a an isolated, dislocation-free ice crystal when it is in equilibrium with the vapor phase in an isothermal closed environment, as a function of temperature. From our analysis we draw the following conclusions: 1)…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…
Morphological evolution of heteroepitaxial nanoislands toward equilibrium (coarsening) is computed using the detailed continuum model that incorporates the quantum size effect. Results reveal the metastability of the "magic" heights, show…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D)…
We investigate the equilibrium properties of arrays of coherent strained islands in heteroepitaxial thin films of bidimensional materials. The model we use takes into account only three essential ingredients : surface energies, elastic…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…
The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to…
We study the energetics of island formation in Stranski-Krastanow growth within a parameter-free approach. It is shown that an optimum island size exists for a given coverage and island density if changes in the wetting layer morphology…
Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…
We introduce an off-lattice model with continuous particle distances and pair-potential interactions which allows for the efficient simulation of strained heteroepitaxial growth by means of kinetic Monte Carlo (KMC) simulations. We discuss…
A strained epitaxial film deposited on a deformable substrate undergoes a morphological instability relaxing the elastic energy by surface diffusion. The nonlinear and nonlocal dynamical equations of such films with wetting interactions are…
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…
The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation,…
Accounting for the anharmonicity of the real interatomic potentials in a model in 1+1 dimensions shows that coherent 3D islands can be formed on the wetting layer in a Stranski-Krastanov growth mode predominantly in compressed overlayers.…
In the electrochemical deposition of thin films the measurement of the current-time curve does not allow for a direct determination of the nucleus growth law, electrode surface coverage and mean film thickness. In this work we present a…
In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction…
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001)…
We consider a variational model for the formation of islands in heteroepitaxial growth on unbounded domains. We first derive the scaling regimes of the minimal energy in terms of the volume of the film and the amplitude of the…