The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

Eckhard Pehlke; Nikolaj Moll; Matthias Scheffler

The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate

mtrl-th 2016-09-07 v1 Materials Science

Authors: Eckhard Pehlke , Nikolaj Moll , Matthias Scheffler

Abstract

The equilibrium shape of strained InAs quantum dots grown epitaxially on a GaAs(001) substrate is derived as a function of volume. InAs surface energies are calculated within density-functional theory, and a continuum approach is applied for the elastic relaxation energies.

Keywords

InAs quantum dots GaAs(001) equilibrium shape density functional theory surface energy elastic relaxation epitaxy

Cite

@article{arxiv.mtrl-th/9607012,
  title  = {The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate},
  author = {Eckhard Pehlke and Nikolaj Moll and Matthias Scheffler},
  journal= {arXiv preprint arXiv:mtrl-th/9607012},
  year   = {2016}
}

Comments

4 pages, 1 figure, to appear in "The Physics of Semiconductors"

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