We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.
@article{arxiv.cond-mat/0304157,
title = {Gallium adsorption on (0001) GaN surfaces},
author = {C. Adelmann and J. Brault and G. Mula and B. Daudin and L. Lymperakis and J. Neugebauer},
journal= {arXiv preprint arXiv:cond-mat/0304157},
year = {2009}
}