Step edge barriers on GaAs(001)

Pavel Šmilauer; Dimitri D. Vvedensky

doi:10.1103/PhysRevB.48.17603

Step edge barriers on GaAs(001)

Condensed Matter 2009-10-22 v1

Authors: Pavel Šmilauer , Dimitri D. Vvedensky

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Abstract

We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.

Keywords

surface growth and coarsening semiconductor nanowire growth surface science

Cite

@article{arxiv.cond-mat/9311061,
  title  = {Step edge barriers on GaAs(001)},
  author = {Pavel Šmilauer and Dimitri D. Vvedensky},
  journal= {arXiv preprint arXiv:cond-mat/9311061},
  year   = {2009}
}