A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.
@article{arxiv.1307.7758,
title = {Understanding Polarization Properties of InAs Quantum Dots by Atomistic Modeling of Growth Dynamics},
author = {Vittorianna Tasco and Muhammad Usman and Maria Teresa Todaro and Milena De Giorgi and Adriana Passaseo},
journal= {arXiv preprint arXiv:1307.7758},
year = {2015}
}
Comments
in press, AIP proceedings for ICPS 2012 - 31st International Conference on the Physics of Semiconductors, July 29-August 3, 2012 Zurich