English

Polarization Independent Ground State Optical Transitions in Closely Stacked InAs/GaAs Columnar Quantum Dots

Mesoscale and Nanoscale Physics 2020-06-30 v1 Materials Science

Abstract

This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.

Keywords

Cite

@article{arxiv.2006.15989,
  title  = {Polarization Independent Ground State Optical Transitions in Closely Stacked InAs/GaAs Columnar Quantum Dots},
  author = {Muhammad Usman},
  journal= {arXiv preprint arXiv:2006.15989},
  year   = {2020}
}

Comments

2 pages, 2 figures, conference extended abstract