Related papers: Quantum dot self consistent electronic structure a…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…
Using renormalization-group techniques we analyze equilibrium properties of a large gated quantum dot coupled via a long and narrow channel to a reservoir of electrons. Treating the electrons in the channel as one-dimensional and…
We study theoretically a quantum dot in the quantum Hall regime that is strongly coupled to a single lead via a point contact. We find that even when the transmission through the point contact is perfect, important features of the Coulomb…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…
We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their…
We study the equilibrium properties of a quantum dot connected to a bulk lead by a single-mode quantum point contact. The ground state energy and other thermodynamic characteristics of the grain show periodic dependence on the gate voltage…
Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We investigate coherent transport in Si:MOSFETs with nominal gate lengths 50 to 100nm and various widths at very low temperature. Independent of the geometry, localized states appear when G=e^{2}/h and transport is dominated by resonant…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system…
We consider an interacting quantum dot working as a coherent source of single electrons. The dot is tunnel coupled to a reservoir and capacitively coupled to a gate terminal with an applied ac potential. At low frequencies, this is the…
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits…
We study electrical and thermoelectrical properties for a double quantum dot system. We consider the cases of both single-level and multilevel quantum dots whatever the way they are coupled, either in a series or in a parallel arrangement.…
We develop a theory of the conductance of a quantum dot connected to two leads by single-mode quantum point contacts. If the contacts are in the regime of perfect transmission, the conductance shows no Coulomb blockade oscillations as a…