Related papers: Quantum dot self consistent electronic structure a…
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…
Spherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. Nonparabolicity of the Si conduction band is described by the energy dependence of electron effective…
The quantum transport of electrons in an artificial atom, such as a quantum dot (QD), is governed by the Coulomb blockade (CB) effects, revealing the ground-state charge configuration of the electronic system under interplays of the on-site…
We study transport properties for a quantum dot coupled to normal leads with a pseudogap density of states at zero temperature, using the second-order perturbation theory based on the Keldysh formalism. We clarify that the hybridization…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We consider the proximity effect in a normal dot coupled to a bulk superconducting reservoir by the tunnel contact with large normal conductance. Coulomb interaction in the dot suppresses the proximity minigap induced in the normal part of…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
Resonant tunneling through identical potential barriers is a textbook problem in quantum mechanics. Its solution yields total transparency (100% tunneling) at discrete energies. This dramatic phenomenon results from coherent interference…
In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…
We examine a quantum dot with $N_{\rm dot}$ levels which is strongly coupled to leads for varying number of channels $N$ in the leads. It is shown both analytically and numerically that for strong couplings between the dot and the leads, at…
We have used modern supercomputer facilities to carry out extensive numerical simulations of statistical properties of 1D and 2D arrays of single-electron islands with random background charges, in the limit of small island…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the…
We present a generalized electrostatic SWAP gate realized in a chain of two double quantum dots operated in the single-electron regime. Using a minimalist tight-binding model, we derive analytical results and corroborate them with numerical…
We investigate sequential tunneling transport through a semiconductor double quantum dot structure by combining a simple microscopic quantum confinement model with a Mott-Hubbard type correlation model. We calculate nonperturbatively the…
The conductance through a mesoscopic system of interacting electrons coupled to two adjacent leads is conventionally derived via the Keldysh nonequilibrium Green's function technique, in the limit of noninteracting leads [see Y. Meir…
The thermoelectric properties of quantum dot arrays (QDAs) embedded in nanowires connected to electrodes are studied theoretically in the Coulomb blockade regime. A Hurbbard-Anderson model is used to simulate the electronic contribution to…
We predict large regions of the charge stability diagram using a multi-band and multi-electron configuration interaction model of a double quantum dot system. We account for many-body interactions within each quantum dot using full…
We study a strongly interacting "quantum dot 1" and a weakly interacting "dot 2" connected in parallel to metallic leads. Gate voltages can drive the system between Kondo-quenched and non-Kondo free-moment phases separated by…
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by…