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Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric…
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) {\delta}-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 {\mu}m). Surprisingly, the measurements…
We introduce millimeter-wave silicon photonic crystal cavities as a versatile platform for the perturbative sensing of nanoscale materials. This dielectric-based platform is compatible with strong magnetic fields, opening avenues for…
Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution…
This work presents a high-resolution X-ray microtomography system that uses commercial off-the-shelf (COTS) CMOS image sensors as direct detectors, relying on the sensor s intrinsic resolution to achieve tomographic reconstructions without…
Deterministic and versatile approaches to sample preparation on nanoscopic scales are important in many fields including photonics, electronics, biology and material science. However, challenges exist in meeting many nanostructuring…
Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
We present an interferometric spectral-domain optical coherence tomography microscopy setup to detect structural changes using interference of light reflected from different interfaces of the sample. We induce a reproducible nanometer-scale…
Characterization and control of the transverse phase space of high-brightness electron beams is required at free-electron lasers or electron diffraction experiments for emittance measurement and beam optimization as well as at advanced…
Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron…
Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We have analyzed the structure of solid, rough and porous nanowire surfaces of boron-doped silicon substrates with resistivities of \rho >…
Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the…
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly…
The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…
Motivated by the need for less destructive imaging of nanostructures, we pursue point-source in-line holography (also known as point projection microscopy, or PPM) with very low energy electrons (-100 eV). This technique exploits the recent…
We present wideband microwave measurements (1-22 GHz) taken on Superconductor/Ferromagnet heterostructures with the Corbino disk technique. We apply the technique to Nb/PdNi/Nb trilayers in the vortex state and we compare the results to…
We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a…
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled…
A localized measurement of the RF critical field on superconducting radio frequency (SRF) cavity materials is a key step to identify specific defects that produce quenches of SRF cavities. Two new measurements are performed to demonstrate…