Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) {\delta}-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 {\mu}m). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
@article{arxiv.1907.00673,
title = {The occupied electronic structure of ultrathin boron doped diamond},
author = {A. K. Schenk and A. C. Pakpour-Tabrizi and A. J. U. Holt and S. K. Mahatha and F. Arnold and M. Bianchi and R. B. Jackman and J. A. Miwa and Ph. Hofmann and S. P. Cooil and J. W. Wells and F. Mazzola},
journal= {arXiv preprint arXiv:1907.00673},
year = {2019}
}
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7 pages, 4 figures. please contact the corresponding author to access the supplementary material