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Related papers: Hole doping MgB$_2$ without chemical substitution

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Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely,…

Computational Physics · Physics 2016-08-04 Manh-Thuong Nguyen , Pham Nam Phong

Superconductivity (SC) is absent in Cr-substituted BaFe$_{2}$As$_{2}$ (CrBFA), a well-established but poorly understood topic. Additionally, the suppression of the spin density wave transition temperature ($T_{\text{SDW}}$) in CrBFA and…

Chemical bonding and electronic structure of MgB2, a boron-based newly discovered superconductor, is studied using self-consistent band structure techniques. Analysis of the transformation of the band structure for the hypothetical series…

Condensed Matter · Physics 2009-11-07 K. D. Belashchenko , M. van Schilfgaarde , V. P. Antropov

This work aims at investigating the effect that the energy transferred during powder-to-wall collisions in a milling process without grinding media entails on solid-gas reactions. For this purpose, the synthesis of Mg(BH$_4$)$_2$ from…

In this work the effect of Carbon and Aluminium doping on the multiband MgB2 superconductor is analyzed. Using the rigid band and virtual crystal approximations (RBA and VCA), it was found that the main effect of doping on the band…

Superconductivity · Physics 2007-05-23 Sabina Ruiz-Chavarria , Gustavo Tavizon , Pablo de la Mora

The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to…

Materials Science · Physics 2026-01-14 Minhee Kang , Woojin Choi , Choongyu Hwang , Jinwoong Hwang

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission…

Materials Science · Physics 2008-10-23 S. Y. Zhou , D. A. Siegel , A. V. Fedorov , A. Lanzara

We report a detailed study of the electronic structure of the MgB$_{2}$ with different lattice constants by using the full-potential linearized augmented plane wave(FPLAPW) method. It is found that the lattice parameters have great effect…

Materials Science · Physics 2009-11-07 Xiangang Wan , Jinming Dong , Hongming Weng , D. Y. Xing

In the spinless fermion model on a square lattice with infinite nearest-neighbor repulsion, holes doped into the half-filled ordered state form stripes which, at low doping, are stable against phase separation into an ordered state and a…

Strongly Correlated Electrons · Physics 2007-05-23 U. Hizi , C. L. Henley

The present Letter proposes a device based on graphene for infrared light emission. It is based on a n- and p-doped monolayer graphene (MGs), with Fermi energies $E_F$ and -$E_F$, respectively, sandwiching a bilayer graphene (BG) with…

Mesoscale and Nanoscale Physics · Physics 2016-08-19 Z. Z. Alisultanov , M. S. Reis

To understand the link between doping and electronic properties in high temperature superconductors, we report first-principles calculations on the oxygen doping effect for the single layer cuprate HgBa$_2$CuO$_{4+\delta}$. The doping…

Superconductivity · Physics 2007-05-23 P. Süle , C. Ambrosch-Draxl , H. Auer , E. Y. Sherman

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or…

Mesoscale and Nanoscale Physics · Physics 2020-09-29 Sam Vaziri , Victoria Chen , Lili Cai , Yue Jiang , Michelle Chen , Ryan Grady , Xiaolin Zheng , Eric Pop

Doped graphene sheets are pseudochiral two-dimensional Fermi liquids with abnormal electron-electron interaction physics. We address graphene's Fermi liquid properties quantitatively using a microscopic random-phase-approximation theory and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Marco Polini , Reza Asgari , Yafis Barlas , T. Pereg-Barnea , A. H. MacDonald

Buried two dimensional electron gasses (2DEGs) have recently attracted considerable attention as a testing ground for both fundamental physics and quantum computation applications. Such 2DEGs can be created by phosphorus delta (\delta)…

Materials Science · Physics 2013-06-04 Jill A. Miwa , Philip Hofmann , Michelle Y. Simmons , Justin W. Wells

We report high-resolution, bulk Compton scattering measurements unveiling the Fermi surface of an optimally-doped iron-arsenide superconductor, Ba(Fe$_{0.93}$Co$_{0.07}$)$_2$As$_2$. Our measurements are in agreement with first-principles…

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron…

Mesoscale and Nanoscale Physics · Physics 2015-06-16 V. Ryzhii , I. Semenikhin , M. Ryzhii , D. Svintsov , V. Vyurkov , A. Satou , T. Otsuji

The geometrical and electronic structure of potassium doped phenanthrene, \ce{K3C14H10}, have been studied by first-principles density functional theory. The main effect of potassium doping is to inject charge in the narrow phenanthrene…

Materials Science · Physics 2011-06-03 P. L. de Andres , A. Guijarro , J. A. Verges

The effect of doping in the two-dimensional Hubbard model is studied within finite temperature exact diagonalization combined with cluster dynamical mean field theory. By employing a mixed basis involving cluster sites and bath molecular…

Strongly Correlated Electrons · Physics 2009-10-29 Ansgar Liebsch , Ning-Hua Tong

The study of the anisotropic superconductor MgB2 using a combination of scanning tunneling microscopy and spectroscopy reveals two distinct energy gaps at Delta1=2.3 meV and Delta2=7.1 meV. Different spectral weights of the partial…

Superconductivity · Physics 2009-11-07 M. Iavarone , G. Karapetrov , A. E. Koshelev , W. K. Kwok , G. W. Crabtree , D. G. Hinks

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first…