Atomic transport at charged graphene: why hydrogen and oxygen are so different
Abstract
Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely, electron doping increases/reduces while hole doping reduces/increases the diffusion barrier of H/O, respectively. Specifically, on neutral graphene the diffusion barriers of O and H are 0.74 and 1.01 eV, which are, upon a hole doping of cm, 0.90 and 0.77 eV, and upon an electron doping of cm, 0.38 and 1.36 eV, respectively. This means, within the harmonic transition state theory, at room temperature, the diffusion rate of O can be decreased or increased by 470 or 2.2 times, and that of H can be increased or decreased by or times, by that hole or electron doping level. The difference between the H and O cases is interpreted in terms of the difference in geometric and bonding changes upon charge doping.
Keywords
Cite
@article{arxiv.1512.02971,
title = {Atomic transport at charged graphene: why hydrogen and oxygen are so different},
author = {Manh-Thuong Nguyen and Pham Nam Phong},
journal= {arXiv preprint arXiv:1512.02971},
year = {2016}
}
Comments
This paper has been withdrawn by the authors for the reasons as follows. The first draft was written to be submitted to a journal that our group has aimed at. However, we have decided to submit the paper to the other journals. The paper is therefore reformatted a little, though its main content is kept nearly intact. We also intend not to keep a new updated version of the manuscript on arXiv