English

Atomic transport at charged graphene: why hydrogen and oxygen are so different

Computational Physics 2016-08-04 v3 Materials Science

Abstract

Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely, electron doping increases/reduces while hole doping reduces/increases the diffusion barrier of H/O, respectively. Specifically, on neutral graphene the diffusion barriers of O and H are 0.74 and 1.01 eV, which are, upon a hole doping of +5.9×1013+5.9\times10^{13} cm2^{-2}, 0.90 and 0.77 eV, and upon an electron doping of 5.9×1013-5.9\times10^{13} cm2^{-2}, 0.38 and 1.36 eV, respectively. This means, within the harmonic transition state theory, at room temperature, the diffusion rate of O can be decreased or increased by 470 or 2.2×107\times 10^7 times, and that of H can be increased or decreased by 10510^5 or 7×1077\times 10^7 times, by that hole or electron doping level. The difference between the H and O cases is interpreted in terms of the difference in geometric and bonding changes upon charge doping.

Keywords

Cite

@article{arxiv.1512.02971,
  title  = {Atomic transport at charged graphene: why hydrogen and oxygen are so different},
  author = {Manh-Thuong Nguyen and Pham Nam Phong},
  journal= {arXiv preprint arXiv:1512.02971},
  year   = {2016}
}

Comments

This paper has been withdrawn by the authors for the reasons as follows. The first draft was written to be submitted to a journal that our group has aimed at. However, we have decided to submit the paper to the other journals. The paper is therefore reformatted a little, though its main content is kept nearly intact. We also intend not to keep a new updated version of the manuscript on arXiv