We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.
@article{arxiv.1305.5012,
title = {Double injection in graphene p-i-n structures},
author = {V. Ryzhii and I. Semenikhin and M. Ryzhii and D. Svintsov and V. Vyurkov and A. Satou and T. Otsuji},
journal= {arXiv preprint arXiv:1305.5012},
year = {2015}
}