Related papers: Intervalley scattering and weak localization in Si…
We develop a model of magnetoresistance oscillations induced by the Hall field in order to study the temperature dependence observed in recent experiments. The model is based on the solution of the von Neumann equation incorporating the…
We present a detailed theoretical investigation on the radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron gas. Electron interactions with impurities, transverse and…
We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced…
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $\rho$. The relaxation time $\tau_{\rm…
We revisit the problem of inelastic times governing the temperature behavior of the weak localization correction and mesoscopic fluctuations in one- and two-dimensional systems. It is shown that, for dephasing by the electron electron…
We investigate the imaginary part of the wave vector dependent dynamic spin susceptibility in Sr$_2$(Ru$_{0.99}$Ti$_{0.01}$)O$_4$ as a function of temperature using neutron scattering. At T=5 K, two-dimensional incommensurate (IC) magnetic…
The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature…
Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport…
Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the…
We study the magnetoresistance, \delta\rho_{xx}(B)/\rho_0, of a high-mobility 2D electron gas in the domain of magnetic fields, B, intermediate between the weak localization and the Shubnikov-de Haas oscillations, where…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…
The results of computer simulation of particle motion over the plane with randomly distributed scatters are presented. They are used to analyse the influence of scattering anisotropy on the negative magnetoresistance due to weak…
Recent experiments on type-II Weyl semimetals such as WTe$_2$, MoTe$_2$, Mo$_x$W$_{1-x}$Te$_2$ and WP$_2$ reveal remarkable transport properties in presence of a strong magnetic field, including an extremely large magnetoresistance and an…
We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $\rho_{xx}$ has an activated temperature dependence. The angle of the magnetic field was…
Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid…
The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%),…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
We calculate the temperature dependence of the weak localization correction in a two dimensional system at arbitrary relation between temperature, $T$ and the elastic mean free time. We describe the crossover in the dephasing time…
Ni$_3$In$_2$S$_2$ is the most recent entrant into the family of topological insulator (TI) materials, the same exhibits very high MR in a low-temperature regime. Here, we report the crystal growth, the structural, micro-structural, and…