Related papers: Intervalley scattering and weak localization in Si…
We develop a general low-energy multiple-scattering partial-wave theory for gapless topological insulator (TI) surfaces in the presence of magnetic impurities. As applications, we discuss the differential cross section (CS)…
Intensity distribution of the neutron magnetic scattering has been taken in the reciprocal space of a single crystal of the "spin ice" system Ho2Ti2O7 at the elastic energy position in the temperature (T) region between 0.4 K and 50 K. The…
Type-II Weyl semimetals are characterized by the tilted linear dispersion in the low-energy excitations, mimicking Weyl fermions but with manifest violation of the Lorentz invariance, which has intriguing quantum transport properties. The…
We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either…
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree…
Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer…
We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density…
We report on the magnetoconductivity of quasi two-dimensional electron systems in inversion layers on p-type InAs single crystals. In low magnetic fields pronounced features of weak localization and antilocalization are observed. They are…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…
We study the elastic scattering time $\tau_\mathrm{s}$ of ultracold atoms propagating in optical disordered potentials in the strong scattering regime, going beyond the recent work of J. Richard \emph{et al.} \textit{Phys. Rev. Lett.}…
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a…
Magneto-intersubband resistance oscillations (MISO) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields tilted from the normal to the 2D electron layer at different…
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very strong, enough to result in the topological phase…
Shape-averaged magnetoconductance (weak localization) is used for the first time to obtain the electron phase coherence time $\tau_{\phi}$ in open ballistic GaAs quantum dots. Values for $\tau_{\phi}$ in the range of temperature T from…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…
The antiferromagnetic structure of Sr3Ir2O7, the bilayer analogue of a spin-orbital Mott insulator Sr2IrO4, was revealed by resonant magnetic x-ray diffraction. Contrasting intensities of the magnetic diffraction at the Ir LIII and LII…
High resolution x-ray magnetic scattering has been used to determine the variation with temperature of the magnetic modulation vector, tau, in ErNi2B2C and TbNi2B2C to study the interplay between the weakly ferromagnetic (WFM) phase and…
We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been…
The temperature and density dependence of the phase coherence time $\tau_\phi$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron…