Related papers: Engineering electron and hole tunneling with asymm…
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave…
We study the collective excitations and inelastic light scattering cross-section of an electron gas confined in a GaAs/AlGaAs coaxial quantum well. These system can be engineered in a core-multi-shell nanowire and inherit the hexagonal…
We use low temperature near-field optical spectroscopy to image the electron density distribution in the plane of a high mobility GaAs quantum well. We find that the electrons are not randomly distributed in the plane, but rather form…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
A quantum computer based on an asymmetric coupled dot system has been proposed and shown to operate as the controlled-NOT-gate. The basic idea is (1) the electron is localized in one of the asymmetric coupled dots. (2)The electron transfer…
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux.…
Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
The theory of electron holes is extended into the quantum regime. The Wigner--Poisson system is solved perturbatively based in lowest order on a weak, standing electron hole. Quantum corrections are shown to lower the potential amplitude…
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K),…
We study electron addition spectra of quantum dots in a broad range of electron occupancies starting from the first electron. Spectra for dots containing <200 electrons reveal a surprising feature. Electron additions are not evenly spaced…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend…
We studied a vertical ``quantum dot molecule'', where one of the dots is occupied with electrons and the other with holes. We find that different phases occur in the ground state, depending on the carrier density and the interdot distance.…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…
We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum dots by tunneling spectroscopy and wave function (WF) mapping at high tunneling currents where electron-electron interactions become relevant. Four…
We have introduced a controllable nano-scale incursion into a potential barrier imposed across a two-dimensional electron gas, and report on the phenomena that we observe as the incursion develops. In the quantum Hall regime, the…
We theoretically investigate the phenomenon of voltage-controlled intracavity electromagnetically induced transparency with asymmetric double quantum dot system. The impact of voltage on frequency pulling and cavity linewidth narrowing are…